| PART |
Description |
Maker |
| C10-0046 LS9V |
Primary lithium-thionyl chloride High energy density Battery pack
|
saftbatteries
|
| LS9V |
Primary lithium-thionyl chloride (Li-SOCl2)High energy density Battery pack
|
SAFT
|
| LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
| UPS123607-12 |
Its characteristics are high energy density, small footprint and high discharge efficiency.
|
CSB Battery Co., Ltd.
|
| UPS123606-12 |
Its characteristics are high energy density, small footprint and high discharge efficiency.
|
CSB Battery Co., Ltd.
|
| SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor
120 V, 100 A high energy NPN transistor
100 V, 100 A high energy NPN transistor
140 V, 100 A high energy NPN transistor
160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
|
| 1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD
In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68
:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40
High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44
High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40
High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| ATV750 ATV750-20DM ATV750-20DM_883 ATV750-20GM ATV |
THERMISTOR GLASS 250 OHM DO-35 UV PLD, 25 ns, CDIP24
THERMISTOR GLASS 1K OHM DO-35 OT PLD, 25 ns, PDIP24
THERMISTOR GLASS 10K OHM DO-35 OT PLD, 25 ns, PDIP24
THERMISTOR GLASS 30K OHM DO-35 UV PLD, 25 ns, CDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDSO24
High Density UV Erasable Programmable Logic Device UV PLD, 20 ns, CDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PQCC28
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CQCC28
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP24
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
|
